MMJT350T1 |
RFQ for MMJT350T1 Required Field |
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| Technical/Catalog Information | MMJT350T1 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 300V |
| Current - Collector (Ic) (Max) | 500mA |
| Power - Max | 2.75W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | - |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Surface Mount |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MMJT350T1 MMJT350T1 |
| Product | Manufacturers | Pack | D/C |
| MMJT350T1 | - | - | 2006 |
...designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.
Features |
| ` High Collector?Emitter Sustaining Voltage -VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc` Excellent DC Current Gain -hFE = 30-240 @ IC = 50 mAdc` Epoxy Meets UL94, V-0 @ 0.125 in` ESD Ratings:Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V |
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Rating |
Symbol |
Value |
Unit | |||||||||||||||||||||||||||||||||||||||
| Collector-Emitter Voltage |
VCEO |
300 |
Vdc | |||||||||||||||||||||||||||||||||||||||
| Collector-Base Voltage |
VCB |
300 |
Vdc | |||||||||||||||||||||||||||||||||||||||
| Emitter-Base Voltage |
VEB |
3.0 |
Vdc | |||||||||||||||||||||||||||||||||||||||
| Collector Current - Continuous - Peak |
IC |
0.5 |
Adc | |||||||||||||||||||||||||||||||||||||||
| Total Power Dissipation @ TC= 25 Derate above 25 Total PD @ TA = 25 mounted on 1" sq. (645 sq. mm) Collector pad on FR-4 bd materi Total PD @ TA = 25 mounted on 0.012" sq. (7.6 sq. mm) Collector pad on FR-4 bd materia |
PD |
2.75 |
W | |||||||||||||||||||||||||||||||||||||||
Operating and Storage Junction
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